发明名称 Electro-static discharge protection circuit and liquid crystal display
摘要 An electro-static discharge protection circuit for a liquid crystal display is disclosed. In response to positive electro-static charges being generated on the signal line, a thin film transistor with a gate electrode connected to the high level signal line is switched on, and the positive electro-static charges are discharged through the switched on thin film transistor. In addition, in response to negative electro-static charges being generated on the signal line, a thin film transistor with a gate electrode connected to the low level signal line is switched on, and the negative electro-static charges are discharged through the switched on thin film transistor.
申请公布号 US9304367(B2) 申请公布日期 2016.04.05
申请号 US201414222108 申请日期 2014.03.21
申请人 Xiamen Tianma Micro-Electronics Co., Ltd.;Tianma Micro-Electronics Co., Ltd. 发明人 Wu Hao;Xia Jun
分类号 G02F1/1333;G02F1/1362;H01L27/02;H02H9/04 主分类号 G02F1/1333
代理机构 Alston & Bird LLP 代理人 Alston & Bird LLP
主权项 1. An electro-static discharge protection circuit for a liquid crystal display, wherein the liquid crystal display is provided with a signal line, a low level signal line and a high level signal line, and the electro-static discharge protection circuit comprises: a first thin film transistor, wherein a drain/source electrode and a source/drain electrode of the first thin film transistor are respectively connected to the signal line and the low level signal line; a second thin film transistor, wherein a drain/source electrode and a source/drain electrode of the second thin film transistor are respectively connected to the signal line and the high level signal line; a third thin film transistor, wherein a drain/source electrode and a source/drain electrode of the third thin film transistor are respectively connected to the signal line and the low level signal line, and a high level signal is provided to a gate electrode of the third thin film transistor; and a fourth thin film transistor, wherein a drain/source electrode and a source/drain electrode of the fourth thin film transistor are respectively connected to the signal line and the high level signal line, and a low level signal is provided to a gate electrode of the fourth thin film transistor, wherein when positive electro-static charges are generated on the signal line, a voltage corresponding to the positive electro-static charges is higher than a voltage of the high level signal line, a thin film transistor with a gate electrode connected to the high level signal line is switched on, and the positive electro-static charges are discharged through the switched on thin film transistor, andwhen negative electro-static charges are generated on the signal line, a voltage corresponding to the negative electro-static charges is lower than a voltage of the low level signal line, a thin film transistor with a gate electrode connected to the low level signal line is switched on, and the negative electro-static charges are discharged through the switched on thin film transistor.
地址 Xiamen CN