Structure and method to form localized strain relaxed SiGe buffer layer

摘要

A method includes forming a multilayered structure by providing a substrate having a semiconductor layer disposed on a top surface thereof, the semiconductor layer containing misfit dislocations and associated threading dislocations. The method further includes depositing a tensile strained dielectric layer on a top surface of the semiconductor layer to induce a compressive strain in the semiconductor layer and annealing the multilayered structure to cause the misfit dislocations and associated threading dislocations to propagate within the semiconductor layer. The method further immobilizes the propagating misfit dislocations and associated threading dislocations in a predetermined portion of the semiconductor layer. A multilayered structure formed by the method is disclosed wherein a semiconductor layer contains misfit dislocations and associated threading dislocations that are immobilized within a predetermined portion of the semiconductor layer, where other portions of the semiconductor layer surrounding the predetermined portion are locally strain relaxed portions.

主权项

1. A method, comprising:
forming a multilayered structure by providing a substrate having a semiconductor layer disposed on a top surface thereof, the semiconductor layer containing misfit dislocations and associated threading dislocations, and depositing a tensile strained dielectric layer on a top surface of the semiconductor layer to induce a compressive strain in the semiconductor layer; annealing the multilayered structure to cause the misfit dislocations and associated threading dislocations to propagate within the semiconductor layer; and immobilizing the propagating misfit dislocations and associated threading dislocations in a predetermined portion of the semiconductor layer; further comprising forming an aperture in the tensile strained dielectric layer and filling the aperture with compressively strained dielectric material, where the predetermined portion of the semiconductor layer is a portion that underlies the aperture that is filled with the compressively strained dielectric material.