High-electron-mobility transistors

摘要

High-electron-mobility transistors that include field plates are described. In a first implementation, a HEMT includes a first and a second semiconductor material disposed to form a heterojunction at which a two-dimensional electron gas arises and source, a drain, and gate electrodes. The gate electrode is disposed to regulate conduction in the heterojunction between the source electrode and the drain electrode. The gate has a drain-side edge. A gate-connected field plate is disposed above a drain-side edge of the gate electrode and extends laterally toward the drain. A second field plate is disposed above a drain-side edge of the gate-connected field plate and extends laterally toward the drain.

主权项

1. A high-electron-mobility transistor (HEMT) comprising:
a first semiconductor material and a second semiconductor material disposed to form a heterojunction at which a two-dimensional electron gas arises; a source electrode, a drain electrode, and a gate electrode, the gate electrode disposed to regulate conduction in the heterojunction between the source electrode and the drain electrode, the gate having a drain-side edge; a gate-connected field plate disposed above a drain-side edge of the gate electrode and extending laterally toward the drain; and a second field plate disposed above a drain-side edge of the gate-connected field plate and extending laterally toward the drain,wherein, in the OFF state and at a potential difference between the source and the drain in excess of the absolute value of a gate swing amplitude, charge carriers are depleted from a portion of the heterojunction in a vicinity of the drain-side edge of the gate-connected field plate, the depletion of charge carriers effective to saturate a lateral electric field in the heterojunction in a vicinity of the drain-side edge of the gate electrode.