Dummy gate electrode of semiconductor device

摘要

The disclosure relates to a dummy gate electrode of a semiconductor device. An embodiment comprises a substrate comprising a first surface; an insulation region covering a portion of the first surface, wherein the top of the insulation region defines a second surface; and a dummy gate electrode over the second surface, wherein the dummy gate electrode comprises a bottom and a base broader than the bottom, wherein a ratio of a width of the bottom to a width of the base is from about 0.5 to about 0.9.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a substrate having an insulation region over the substrate and a fin extending through an opening in the insulation region; forming a gate electrode layer over the fin and extending over the insulation region; and patterning the gate electrode layer to form a gate electrode and a dummy gate electrode using a first etching process and a second etching process, wherein the gate electrode extends over an upper portion of the fin, and wherein the dummy gate electrode is over the insulation region, the dummy gate electrode being isolated from other circuitry.