Semiconductor device and fabrication method thereof

摘要

A semiconductor device and a method for fabricating the semiconductor device are disclosed. A gate stack is formed over a substrate. A spacer is formed adjoining a sidewall of the gate stack. A recess is formed between the spacer and the substrate. Then, a strained feature is formed in the recess. The disclosed method provides an improved method by providing a space between the spacer and the substrate for forming the strained feature, therefor, to enhance carrier mobility and upgrade the device performance.

主权项

1. A method comprising:
forming a gate stack over a substrate; forming a sidewall spacer along a sidewall of the gate stack; removing a first portion of the sidewall spacer to form a first recess within the sidewall spacer; after removing the first portion of the sidewall spacer to form the first recess within the sidewall spacer, removing a portion of the substrate to form a second recess within the substrate; and forming a source/drain feature within the first and second recesses.