Semiconductor device

摘要

A semiconductor device includes a semiconductor device may include, but is not limited to, a semiconductor substrate, an isolation electrode, a gate electrode, a gate insulating film, and a first insulating film. The semiconductor substrate has a first groove and a second groove. An isolation electrode is positioned in the first groove. The gate electrode is positioned in the second groove. The gate insulating film is adjacent to the gate electrode. The first insulating film is adjacent to the isolation electrode. The isolation electrode is greater in threshold voltage than the gate electrode.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having first and second grooves; a isolation electrode in the first groove; a gate electrode in the second groove; a gate insulating film between the semiconductor substrate and the gate electrode; and a first insulating film extending at least beneath the isolation electrode, the first insulating film beneath the isolation electrode being thicker than the gate insulating film beneath the gate electrode, wherein at least one of the isolation electrode and the gate electrode includes an upper electrode and a lower electrode.