发明名称 TEST METHOD FOR SEMICONDUCTOR TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a test method by which fluctuation in the threshold voltage of a semiconductor transistor is recovered in a short period of time and the fluctuation is not carried over into a next process.SOLUTION: In the wafer test or package test of a semiconductor transistor, a voltage is applied to each terminal of the transistor to be tested under a bias condition for recovering a threshold voltage fluctuation after performing a test in which the threshold voltage fluctuation of the transistor to be tested is very likely to occur due to voltage application, and the threshold voltage fluctuation is thereby recovered. The bias condition can, for example, be a condition in which a prescribed high voltage is applied between the source and drain of the transistor to be tested while the transistor to be tested is turned off, or a condition in which a prescribed substrate voltage is applied to the reverse side of a wafer while no electric current flows between the source and drain of the transistor to be tested.SELECTED DRAWING: Figure 1
申请公布号 JP2016045042(A) 申请公布日期 2016.04.04
申请号 JP20140168628 申请日期 2014.08.21
申请人 SHARP CORP 发明人 IGAKI TOSHIAKI
分类号 G01R31/26;H01L21/66 主分类号 G01R31/26
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