| 摘要 |
Provided is a light emitting device. The light emitting device may comprise: an active layer on a substrate; a semiconductor layer of a first conductivity type on the active layer; a first electrode arranged on a top of the semiconductor layer of the first conductivity type, forming an ohmic contact with the semiconductor layer of the first conductivity type; and a second electrode arranged on the top of the semiconductor layer of the first conductivity type which forms a Schottky contact with the semiconductor layer of the first conductivity type. The light emitting device of the present invention has high reliability while having reduced manufacturing costs and manufacturing time with a simplified process. |
