| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be miniaturized.SOLUTION: A P-type epitaxial growth layer PEL is formed on a P-type semiconductor substrate SUB while interposing an N-type embedded region NBR and a P-type embedded region PBR. On the P-type epitaxial growth layer PEL, a cathode region KR, an anode region AR and an N-type sinker region NSR are formed. On a surface of an isolation region STR for electrically isolating the anode region AR and the N-type sinker region NSR from each other, a resistive element RE is formed. One end part of the resistive element RE is electrically connected with the anode region AR and the N-type sinker region NSR respectively, and the other end part is electrically connected with a ground potential.SELECTED DRAWING: Figure 4 |
