PRODUCTION METHOD OF ALUMINUM OXIDE SINGLE CRYSTAL WAFER, AND ALUMINUM OXIDE SINGLE CRYSTAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a production method of an aluminum oxide single crystal wafer capable of producing an aluminum oxide single crystal wafer in which the density of minute defects is suppressed.SOLUTION: A production method of an aluminum oxide single crystal wafer having a heat treatment process for performing a heat treatment to an aluminum oxide single crystal wafer under conditions that a heat treatment temperature is 1,000°C or higher and 2,040°C or lower and that a holding time at the heat treatment temperature is 10 hours or longer.SELECTED DRAWING: None