| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage element and a magnetic memory, capable of providing a magnetic unit in a higher density.SOLUTION: A magnetic memory comprises a first magnetic unit 301, a second magnetic unit 302, a third magnetic unit 303, a reading and writing unit 203, a first electrode 101, a second electrode 102, a third electrode 103, a first current source 151, and a second current source 152. The first magnetic unit 301 and the second magnetic unit 302 extend in a first direction, and have an axis of easy magnetization in a direction crossing the first direction. The third magnetic unit 303 has an axis of easy magnetization in a second direction crossing the first direction. The first current source 151 passes current between at least one of the first electrode 101 and the second electrode 102 and the third electrode 103. The second current source 152 passes current between the first electrode 101 and the second electrode 102.SELECTED DRAWING: Figure 1 |
