| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal silicon pull-up device and a single crystal silicon pull-up method such that when single crystal silicon is pulled up from a silicon melt left in a quartz crucible after a single crystal silicon pulled up first has dislocation, a shape of a shoulder part of the single crystal silicon is prevented from having large change from a shape of a shoulder part of the single crystal silicon having been pulled up first.SOLUTION: When a shoulder part of single crystal silicon is formed, a heater is controlled according to a first shoulder part temperature control line showing relation between a temperature of a quartz crucible and a length of the shoulder part of the single crystal silicon, and when the single crystal silicon has dislocation at a position shorter than an expected pull-up length, a control part generates a second shoulder part temperature control line optimized according to the remaining amount of a silicon melt remaining in the quartz crucible.SELECTED DRAWING: Figure 1 |
