发明名称 |
AIR GAP STRUCTURE AND METHOD |
摘要 |
A device comprises: a first protection layer placed on sidewalls and a bottom of a first trench in a first dielectric layer; a first barrier layer placed on the first protection layer; a first metal line in the first trench; a second protection layer placed on sidewalls and a bottom of a second trench in the first dielectric layer; a second barrier layer placed on the second protection layer; a second metal line in the first trench; an air gap between the first trench and the second trench; and a third protection layer placed on sidewalls of a third trench in the first dielectric layer. The first, second, third protection layers are made of the same material. According to the present invention, provided are a structure and a method of an air gap. |
申请公布号 |
KR20160036453(A) |
申请公布日期 |
2016.04.04 |
申请号 |
KR20140182403 |
申请日期 |
2014.12.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TING CHIH YUAN;SHIEH JYU HORNG |
分类号 |
H01L23/482;H01L21/764;H01L21/768 |
主分类号 |
H01L23/482 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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