发明名称 AIR GAP STRUCTURE AND METHOD
摘要 A device comprises: a first protection layer placed on sidewalls and a bottom of a first trench in a first dielectric layer; a first barrier layer placed on the first protection layer; a first metal line in the first trench; a second protection layer placed on sidewalls and a bottom of a second trench in the first dielectric layer; a second barrier layer placed on the second protection layer; a second metal line in the first trench; an air gap between the first trench and the second trench; and a third protection layer placed on sidewalls of a third trench in the first dielectric layer. The first, second, third protection layers are made of the same material. According to the present invention, provided are a structure and a method of an air gap.
申请公布号 KR20160036453(A) 申请公布日期 2016.04.04
申请号 KR20140182403 申请日期 2014.12.17
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 TING CHIH YUAN;SHIEH JYU HORNG
分类号 H01L23/482;H01L21/764;H01L21/768 主分类号 H01L23/482
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