发明名称 PHASE-SHIFT BLANK MASK AND PHOTOMASK
摘要 PROBLEM TO BE SOLVED: To provide a phase-shift blank mask; and to provide a photomask.SOLUTION: Disclosed is a phase-shift blank mask, wherein a light-shielding film includes a metal compound having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blank mask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern.SELECTED DRAWING: Figure 1
申请公布号 JP2016045490(A) 申请公布日期 2016.04.04
申请号 JP20150142712 申请日期 2015.07.17
申请人 S & S TECH CO LTD 发明人 NAM KEE-SOO;SHIN CHEOL;YANG CHUL-KYU;LEE JONG-HWA;CHOI MIN-KI;KIM CHANG-JUN;JANG KYU-JIN
分类号 G03F1/32;C23C14/06;G03F1/58;G03F1/80;H01L21/3065 主分类号 G03F1/32
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