发明名称 |
METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS |
摘要 |
Provided is a method for forming a photolithographic pattern by using a negative ton development process. In addition, provided are a coated substrate and an electronic device formed by the method. The method can be used to manufacture the electronic device. To this end, the method for forming a photolithographic pattern includes the following steps: (a) providing a substrate including at least one layer to be patterned on a surface thereof; (b) applying a photoresist composition layer comprising a resin including an acid cleavable group and an acid generator on the at least one layer to be patterned; (c) patternwise exposing the photoresist composition layer to an actinic radiation to be patterned; and (d) applying a developer on the photoresist composition layer. |
申请公布号 |
KR20160036549(A) |
申请公布日期 |
2016.04.04 |
申请号 |
KR20160034272 |
申请日期 |
2016.03.22 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS LLC |
发明人 |
KANG, SEOK HO;CUTLER CHARLOTTE |
分类号 |
H01L21/027;G03F1/80;G03F7/038;G03F7/09;G03F7/20;G03F7/32;H01L21/3213 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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