发明名称 METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS
摘要 Provided is a method for forming a photolithographic pattern by using a negative ton development process. In addition, provided are a coated substrate and an electronic device formed by the method. The method can be used to manufacture the electronic device. To this end, the method for forming a photolithographic pattern includes the following steps: (a) providing a substrate including at least one layer to be patterned on a surface thereof; (b) applying a photoresist composition layer comprising a resin including an acid cleavable group and an acid generator on the at least one layer to be patterned; (c) patternwise exposing the photoresist composition layer to an actinic radiation to be patterned; and (d) applying a developer on the photoresist composition layer.
申请公布号 KR20160036549(A) 申请公布日期 2016.04.04
申请号 KR20160034272 申请日期 2016.03.22
申请人 ROHM AND HAAS ELECTRONIC MATERIALS LLC 发明人 KANG, SEOK HO;CUTLER CHARLOTTE
分类号 H01L21/027;G03F1/80;G03F7/038;G03F7/09;G03F7/20;G03F7/32;H01L21/3213 主分类号 H01L21/027
代理机构 代理人
主权项
地址
您可能感兴趣的专利