发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE WITH DIFFUSION LAYER, AND SEMICONDUCTOR SUBSTRATE WITH DIFFUSION LAYER
摘要 PROBLEM TO BE SOLVED: To provide: a method for manufacturing a semiconductor substrate with a diffusion layer, by which a longer lifetime can be realized without increasing the number of processes; and a semiconductor substrate with a diffusion layer.SOLUTION: A method for manufacturing a semiconductor substrate with a diffusion layer comprises the steps of: applying a p-type diffusion layer-forming composition including a compound including an acceptor element to a semiconductor substrate; forming a p-type diffusion layer by performing a thermal diffusion process; and oxidizing the semiconductor substrate.SELECTED DRAWING: Figure 1
申请公布号 JP2016046302(A) 申请公布日期 2016.04.04
申请号 JP20140167468 申请日期 2014.08.20
申请人 HITACHI CHEMICAL CO LTD 发明人 ODA AKIHIRO;YOSHIDA MASATO;NOJIRI TAKESHI;KURATA YASUSHI;ASHIZAWA TORANOSUKE;MACHII YOICHI;IWAMURO MITSUNORI;SATO HIDEKAZU;SHIMIZU NARIYOSHI;SHIMIZU MARI;SATO TETSUYA
分类号 H01L21/225;H01L21/22;H01L31/068;H01L31/18 主分类号 H01L21/225
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