发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE WITH DIFFUSION LAYER, AND SEMICONDUCTOR SUBSTRATE WITH DIFFUSION LAYER |
摘要 |
PROBLEM TO BE SOLVED: To provide: a method for manufacturing a semiconductor substrate with a diffusion layer, by which a longer lifetime can be realized without increasing the number of processes; and a semiconductor substrate with a diffusion layer.SOLUTION: A method for manufacturing a semiconductor substrate with a diffusion layer comprises the steps of: applying a p-type diffusion layer-forming composition including a compound including an acceptor element to a semiconductor substrate; forming a p-type diffusion layer by performing a thermal diffusion process; and oxidizing the semiconductor substrate.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016046302(A) |
申请公布日期 |
2016.04.04 |
申请号 |
JP20140167468 |
申请日期 |
2014.08.20 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
ODA AKIHIRO;YOSHIDA MASATO;NOJIRI TAKESHI;KURATA YASUSHI;ASHIZAWA TORANOSUKE;MACHII YOICHI;IWAMURO MITSUNORI;SATO HIDEKAZU;SHIMIZU NARIYOSHI;SHIMIZU MARI;SATO TETSUYA |
分类号 |
H01L21/225;H01L21/22;H01L31/068;H01L31/18 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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