SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide an art to control a work function of a thin film by forming the thin film by using a halogen material gas and an organic material gas.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a first layer containing a first element and a second element by performing a predetermined number of times in a time-division manner, a process of supplying a halogen material gas containing the first element to a substrate and a process of supplying to the substrate, a reaction gas which contains the second element and reacts with the first element; and a process of forming a second layer containing the first element and the second element by performing a predetermined number of times in a time-division manner, a process of supplying an organic material gas containing the first element to the substrate and a process of supplying a reaction gas to the substrate. In the semiconductor device manufacturing method, by performing the process of forming the first layer and the process of forming the second layer a predetermined number of times in a time-division manner, a thin film containing the first element and the second element is formed on the substrate.SELECTED DRAWING: Figure 4