SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that is suitable for microfabrication and high density.SOLUTION: A semiconductor device has a first layer, a second layer on the first layer, and a third layer on the second layer. The first layer has a first transistor. The third layer has a second transistor. A channel formation region of the first transistor has a single crystal semiconductor. A channel formation region of the second transistor has an oxide semiconductor. The second layer has a first insulating film, a second insulating film, and a conductive film. The conductive film has a function of electrically connecting between the first transistor and the second transistor. The first insulating film is contacted with the conductive film on the conductive film. The second insulating film is provided on the first insulating film. The second insulating film has a region where a carbon concentration is 1.77×10atoms/cmor more and 1.0×10atoms/cmor less.SELECTED DRAWING: Figure 1