发明名称 FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a field effect transistor which facilitates suppression of loop oscillation.SOLUTION: A field effect transistor 5 includes a plurality of multi-finger electrodes, a gate terminal electrode 33, a drain-terminal electrode 53 and a source-terminal electrode 43. The multi-finger electrodes include two finger gate electrodes, a finger drain electrode and two finger source electrodes. A finger direction is disposed so as to alternately have angles of about +45° and about -45° with respect to a first straight line. The two multi-finger electrodes are made symmetrical with each other with respect to a second straight line that is orthogonal with the first straight line. The first finger gate electrode and the second finger gate electrode are substantially orthogonal. In a connection region of neighboring two multi-finger electrodes, gate terminal electrodes 33 and drain terminal electrodes 53 are provided in a staggered manner.SELECTED DRAWING: Figure 1
申请公布号 JP2016046528(A) 申请公布日期 2016.04.04
申请号 JP20150161215 申请日期 2015.08.18
申请人 TOSHIBA CORP 发明人 TAKAGI KAZUTAKA
分类号 H01L21/338;H01L27/095;H01L29/41;H01L29/778;H01L29/812 主分类号 H01L21/338
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