发明名称 TRANSISTOR HEAVY METAL ION SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a transistor heavy metal ion sensor capable of simply detecting heavy metal ions such as cadmium and easily fabricating a device.SOLUTION: A coordination bond is used in a detection portion. The detection portion has a configuration in which a pyridine derivative is fixed to a metal surface of an extension gate by a sulfide group. In the pyridine derivative, a transistor heavy metal ion sensor is configured which detects a heavy metal ion by measuring change in threshold value voltage or drain current value generated by a bond of heavy metal ions.SELECTED DRAWING: None
申请公布号 JP2016045065(A) 申请公布日期 2016.04.04
申请号 JP20140169136 申请日期 2014.08.22
申请人 YAMAGATA UNIV 发明人 MINAMI TAKESHI;TOKITO SHIZUO;KUMAKI DAISUKE;FUKUDA KENJIRO
分类号 G01N27/416;G01N27/414 主分类号 G01N27/416
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