SCHOTTKY JUNCTION ULTRAVIOLET DETECTOR

摘要

An ultraviolet detector according to an embodiment of the present invention includes: a lower silicon layer; a first insulation layer formed on an upper part of the lower silicon layer; a semiconductor layer partially formed on an upper portion of the first insulation layer to generate an electron and a hole in response to incident light; a second insulation layer formed on upper parts of the first insulation layer and the semiconductor layer to surround the semiconductor layer; a plurality of contact holes formed on the second insulation layer to partially expose an upper surface of the semiconductor layer; a plurality of contacts formed in the interior of the plurality of contact holes to form a Schottky electrode together and the semiconductor layer; a first contact electrode formed on an upper part of the second insulation layer, and electrically connected to an outer contact, of the plurality of contacts, formed in an outer region of an upper part of the semiconductor layer; and a second contact electrode electrically connected to the remaining inner contacts except for the outer contact, of the plurality of contacts.