发明名称 THIN FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a thin film forming method for hardly having a separation of a thin film or a substrate crack because of a high stress to be applied to a substrate from a thin film formed continuously all over the surface of the substrate, because a thin film is also formed on the inner side wall of a groove and because the thin film on the substrate surface continues all over the substrate in the case where the thin film is formed by using a sputtering method on the substrate surface having a rectangle groove in a sectional view.SOLUTION: On the surface of a substrate 4, there are formed a counter-tapered groove 5 having a narrow opening and a wide inside, and an area 6 divided by the groove 5, and thin films 7 and 8 are formed by a PVD method over the substrate 4 having the groove 5 formed, thereby to attain the divided thin film 7.SELECTED DRAWING: Figure 1
申请公布号 JP2016044313(A) 申请公布日期 2016.04.04
申请号 JP20140166780 申请日期 2014.08.19
申请人 SEIKO INSTRUMENTS INC 发明人 SUZUKI SATOYUKI;AMATATSU YOSHIMASA;SOMEYA TETSUO;EBIHARA MIKA
分类号 C23C14/02 主分类号 C23C14/02
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