SILICON CARBIDE EPITAXIAL WAFER, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD OF SILICON CARBIDE EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To obtain a high element yield by an easily-producible silicon carbide epitaxial wafer.SOLUTION: A silicon carbide epitaxial wafer includes a silicon carbide substrate, and a silicon carbide epitaxial growth layer formed on a first principal surface of the silicon carbide substrate, and doped with impurities at a lower concentration than the silicon carbide substrate. A plurality of grooves are formed on a second principal surface facing to the first principal surface of the silicon carbide substrate.SELECTED DRAWING: Figure 1