| 摘要 |
PROBLEM TO BE SOLVED: To improve properties of a semiconductor device including a FINFET.SOLUTION: The semiconductor device includes: two parallelepiped fins F disposed in parallel in an X direction; and a gate electrode GE which is disposed on the fins via a gate insulation film and extends in a Y direction. The semiconductor device is configured as follows. Namely, a drain plug P1D is provided on a drain region DR which is positioned at one side of the gate electrode GE and extends in the Y direction, and two source plugs P1S are provided on a source region SR which is positioned at the other side of the gate electrode GE and extends in the Y direction. The drain plug P1D is disposed while being displaced in such a manner that its position in the Y direction is not overlapped with the two source plugs P1S. Thus, a gate-drain capacity can be made smaller than a gate-source capacity and circuit delay caused by Miller effects can be suppressed. Further, a source-side capacity is increased in comparison with a drain-side capacity, thereby improving stability of circuit operation.SELECTED DRAWING: Figure 2 |
