| 摘要 |
PROBLEM TO BE SOLVED: To suppress the degradation of an electric property of a multilayered film, and to enhance the verticality of a side wall face of the multilayered film after etching.SOLUTION: According to an embodiment, a method for etching an object to be processed through a mask is provided, in which the object to be processed includes a lower electrode, and a multilayered film provided on the lower electrode, and including a first magnetic layer, a second magnetic layer and an insulator layer interposed between the first and second magnetic layers. The method comprises the step of exposing the object to be processed to plasma of a first process gas including a first inert gas and a second inert gas larger than the first inert gas in atomic number, but no hydrogen gas.SELECTED DRAWING: Figure 1 |
