SUBSTRATE PROCESSING METHOD AND SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To shorten a processing time and peel stably.SOLUTION: A substrate processing method of processing a single crystal silicon substrate, includes: a process of supporting and rotationally driving a substrate 10; a process of dividing a surface 20t of the substrate 10 into blocks from first 20to fourth 20depending on a distance from a rotation axis by using the rotation axis of the substrate 10 as a reference; and a process of forming a processing layer 21 by irradiating the surface 20t of the blocks from first 20to fourth 20with laser beams at laser irradiation parts from first 150to fourth 150on the blocks from first 20to fourth 20, and condensing the laser beams inside the substrate 10. The laser irradiation parts from first 150to fourth 150include diffraction optical elements from first 160to fourth 160.SELECTED DRAWING: Figure 1