| 摘要 |
Disclosed is a sulfonium salt represented by chemical formula (0-1), wherein W is an alkylene or arylene group which may contain an ether-based oxygen atom; R^01 is a monovalent hydrocarbon group which may be substituted with a heteroatom or may have a heteroatom; m is an integer of 0-2; k is 0 <= k <= 5 + 4m; R^101, R^102, and R^103 each are independently a monovalent hydrocarbon group which may be substituted with a heteroatom or may have a heteroatom; at least two of R^101, R^102, and R^103 may bind to each other to form a ring together with the sulfur atom in chemical formula; and L is a single bond, or any one of an ester bond, a sulfonic acid ester bond, a carbonate bond, or a carbamate bond. A resist composition comprising the sulfonium salt of the present invention as a photo-acid generator exhibits very high resolution in the micro-processing technique, especially, electron beam or EUV lithography, and can provide a pattern with a small LER. |
