发明名称 SUBSTRATE PROCESSING APPARATUS, GAS INTRODUCTION SHAFT AND GAS SUPPLY PLATE
摘要 The present invention is capable of easily or conveniently providing a variation in sizes of a plurality of processing regions according to process processing when the process processing in which a substrate passes through the processing regions in sequence is performed. Provided is a substrate processing apparatus which includes a substrate support unit where a substrate is placed, a gas supply plate, and a gas introduction shaft. The gas supply plate includes: a processing space ceiling plate unit facing the substrate support unit, wherein a gap between the processing space ceiling plate unit and the substrate support unit is partitioned into a plurality of gas supply regions; and a gas distribution pipe connected to each of the plurality of gas supply regions. The gas introduction shaft includes a plurality of gas introduction pipes in which different types of gas flow, has the gas supply plate mounted thereon, and interposes a plurality of gas discharging spaces in an annular shape, which are formed by different diameters and disposed on different planes, to correspond to the plurality of has introduction pipes respectively so that each of the gas introduction pipes can communicate with the gas distribution pipe in the gas supply plate, when the gas supply plate is mounted.
申请公布号 KR20160035970(A) 申请公布日期 2016.04.01
申请号 KR20150111545 申请日期 2015.08.07
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 NISHITANI EISUKE;TOYODA KAZUYUKI
分类号 H01L21/02;H01L21/67;H01L21/683 主分类号 H01L21/02
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