发明名称 METHOD FOR PRODUCING A MULTILEVEL MICROELECTRONIC STRUCTURE
摘要 The invention relates to a method for producing a multilevel microelectronic structure, comprising at least: the formation of a first layer (236);the production of at least one second layer (239) at least partially covering the first layer (236);the production of at least one microelectronic pattern (220, 220a, 220b) on or in the second layer (239); characterised in that: ;the second layer (239) is formed so as to generate a mechanical stress in it; the first layer (236) forms for the second layer (239) a support preventing relaxation of said stress;;and in that it comprises at least the following steps performed after the production of at least one microelectronic pattern (220, 220a, 220b), elimination of at least part of the first layer (236), thus making it possible to relax at least part of the mechanical stress on the second layer (239) so that at least a portion of the second layer (239) covering said eliminated part of the first layer (236) moves;fixing the moved portion of the second layer (239) to a structure part that has remained fixed;
申请公布号 US2016093504(A1) 申请公布日期 2016.03.31
申请号 US201514865792 申请日期 2015.09.25
申请人 Commissariat A L'Energie Atomique et aux Energies Alternatives 发明人 CORONEL Philippe;Fenouillet-Beranger Claire
分类号 H01L21/3105;H01L27/06 主分类号 H01L21/3105
代理机构 代理人
主权项 1. A method for producing a multilevel microelectronic structure, comprising at least: the formation of a first layer; the production of at least one second layer at least partially covering the first layer; the production of at least one microelectronic pattern on or in the second layer; wherein: the second layer is formed so as to generate a mechanical stress in it; the first layer forms for the second layer a support preventing relaxation of said stress; and comprising at least the following steps performed after the production of at least one microelectronic pattern, elimination of at least part of the first layer, thus making it possible to relax at least part of the mechanical stress on the second layer so that at least a portion of the second layer covering said eliminated part of the first layer and carrying said at least one pattern moves; fixing the moved portion of the second layer to a structure part that has remained fixed; and wherein, prior to the elimination step, at least one discontinuity is produced in the second layer configured so as to control the position of the moved portion of the second layer on the structure part that has remained fixed.
地址 Paris FR