DEFECT INSPECTION APPARATUS AND DEFECT INSPECTION METHOD

摘要

In accordance with an embodiment, a defect inspection method includes: generating first and second images regarding a subject with first and second patterns, extracting first coordinates of the first pattern from the first image, setting a mask region in which a predetermined margin is provided in the first coordinates, taking a difference between the second image and a reference image, and checking the difference against the mask region to detect a defect in the second pattern. The first image is generated from a signal obtained by generating a charged particle beam under a first charged particle irradiation condition and irradiating the charged particle beam to a subject. The second image is generated from a signal obtained by generating a charged particle beam under a second charged particle irradiation condition, irradiating the charged particle beam to a subject region of the subject, and detecting second charged particles generated from the subject.

主权项

1. A defect inspection apparatus comprising:
a charged particle source configured to generate a charged particle beam and irradiate the charged particle beam to a subject comprising a first pattern and a second pattern; a detection unit configured to detect secondary charged particles from the subject by the irradiation of the charged particles and output a signal; a first image generating unit configured to process the signal to generate an image; and a defect detection unit configured to extract first coordinates of the first pattern from an image obtained by irradiating a charged particle beam to the subject under a first charged particle irradiation condition, to set a mask region in which a predetermined margin is provided in the first coordinates, take a difference between an image obtained by irradiating a charged particle beam to the subject under a second charged particle irradiation condition and a reference image obtained by irradiating a charged particle beam to a reference region different from a subject region based on the same layout as the subject under the second charged particle irradiation condition, and to check the difference against the mask region to detect a defect in the second pattern, wherein the first charged particle irradiation condition is a condition in which higher contrast is obtained regarding the first pattern than the second pattern in the image obtained by irradiating the charged particle beam to the subject.