| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device is provided. The semiconductor device includes a first conductive portion on a first side of a first shallow trench isolation (STI) region. The first conductive portion is formed within a first well having a first conductivity type. The first conductive portion has the first conductivity type. The first conductive portion is connected to an electro static discharge (ESD) circuit. A second conductive portion is on a second side of the first STI region. The second conductive portion is formed within a second well having a second conductivity type. The second conductive portion having the first conductivity type is connected to a first nanowire and an input output I/O port. |
| 申请公布号 |
US2016093608(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201414501162 |
申请日期 |
2014.09.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Chu Li-Wei;Chen Bo-Ting;Lin Wun-Jie;Yang Han-Jen |
| 分类号 |
H01L27/06;H01L29/423;H01L23/60;H01L27/088;H01L23/50;H01L29/786;H01L29/06 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first conductive portion on a first side of a first shallow trench isolation (STI) region, the first conductive portion formed within a first well having a first conductivity type, the first conductive portion having the first conductivity type and connected to an electro static discharge (ESD) circuit; and a second conductive portion on a second side of the first STI region, the second conductive portion formed within a second well having a second conductivity type, the second conductive portion having the first conductivity type and connected to a first nanowire and at least one of an input output (I/O) port and a voltage supply. |
| 地址 |
Hsin-Chu TW |
