SEMICONDUCTOR DEVICE EQUIPPED WITH SiC LAYER

摘要

The present invention increases pressure resistance in the longitudinal direction of a semiconductor device while ensuring semiconductor device quality. This semiconductor device is equipped with a Si (silicon) substrate, a SiO2 (silicon oxide) layer formed on a surface of the Si substrate, a Si layer formed on a surface of the SiO2 layer, and a SiC (silicon carbide) layer formed atop a surface of the Si layer. The thickness of the SiO2 layer is not less than 1 µm and does not exceed 20 µm.