| 摘要 |
A semiconductor device having superior characteristic includes an active layer, a gate structure, a spacer, and a source/drain layer. The active layer is formed on a substrate and includes germanium (Ge). The active layer includes a first region having a first Ge concentration, and a second region of which the upper surface touches both sides of the first region and gradually rises from the first region, and has a second GE concentration lower than the first Ge concentration. The gate structure is formed on the first region of the active layer. The spacer is formed on the second region of the active layer and touches the sidewall of the gate structure. The source/drain layer is adjacent to the second region of the active layer. |
