发明名称 |
SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
摘要 |
A semiconductor light-emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The second electrode includes an ohmic electrode contacting the second semiconductor layer, and a semiconductor electrode made of a semiconductor layer contacting the ohmic electrode. |
申请公布号 |
US2016093773(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201514869277 |
申请日期 |
2015.09.29 |
申请人 |
NICHIA CORPORATION |
发明人 |
SANO Masahiko |
分类号 |
H01L33/38;H01L33/42;H01L33/32;H01L33/00;H01L33/06 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor light-emitting element comprising:
a first semiconductor layer of a first conductive type; a second semiconductor layer of a second conductive type; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode connected to the first semiconductor layer; and a second electrode connected to the second semiconductor layer, wherein the second electrode comprises:
a light-transmissive connection electrode in contact with the second semiconductor layer; anda light-transmissive semiconductor electrode made of a semiconductor layer that is in contact with the connection electrode. |
地址 |
Anan-shi JP |