发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 A semiconductor light-emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The second electrode includes an ohmic electrode contacting the second semiconductor layer, and a semiconductor electrode made of a semiconductor layer contacting the ohmic electrode.
申请公布号 US2016093773(A1) 申请公布日期 2016.03.31
申请号 US201514869277 申请日期 2015.09.29
申请人 NICHIA CORPORATION 发明人 SANO Masahiko
分类号 H01L33/38;H01L33/42;H01L33/32;H01L33/00;H01L33/06 主分类号 H01L33/38
代理机构 代理人
主权项 1. A semiconductor light-emitting element comprising: a first semiconductor layer of a first conductive type; a second semiconductor layer of a second conductive type; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode connected to the first semiconductor layer; and a second electrode connected to the second semiconductor layer, wherein the second electrode comprises: a light-transmissive connection electrode in contact with the second semiconductor layer; anda light-transmissive semiconductor electrode made of a semiconductor layer that is in contact with the connection electrode.
地址 Anan-shi JP