| 发明名称 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR TEMPLATE |
| 摘要 |
A method of manufacturing a nitride semiconductor template that includes a base substrate of a sapphire substrate and a nitride semiconductor layer represented by a general formula AlxGa1-xN (0.3≦x≦1) includes: contacting the base substrate with a water vapor atmosphere, nitriding a surface of the base substrate by contacting the base substrate with a nitrogen raw material to form a nitrided area on the surface of the base substrate, and growing a nitride semiconductor layer on the nitrided area. |
| 申请公布号 |
US2016093764(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514867469 |
申请日期 |
2015.09.28 |
| 申请人 |
Nichia Corporation |
发明人 |
GONO Hideyuki;SHIMADA Yosuke |
| 分类号 |
H01L33/00;H01L33/32 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a nitride semiconductor template including a base substrate comprising a sapphire substrate and a nitride semiconductor layer represented by a general formula AlxGa1-xN (0.3≦x≦1), the method comprising:
contacting the base substrate with a water vapor atmosphere; nitiriding a surface of the base substrate by contacting the base substrate with a nitrogen raw material to form a nitrided area on a surface of the base substrate; and growing a nitride semiconductor layer on the nitrided area. |
| 地址 |
Anan-shi JP |
