| 发明名称 |
Magnetic Memory Devices |
| 摘要 |
Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other. |
| 申请公布号 |
US2016093669(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514715633 |
申请日期 |
2015.05.19 |
| 申请人 |
LEE Sung-Chul;KIM Kwang-Seok;KIM Kee-Won;JANG Young-Man;PI Ung-Hwan |
发明人 |
LEE Sung-Chul;KIM Kwang-Seok;KIM Kee-Won;JANG Young-Man;PI Ung-Hwan |
| 分类号 |
H01L27/22;H01L43/10 |
主分类号 |
H01L27/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory device, comprising:
a substrate; a circuit device on the substrate; a plurality of lower electrodes electrically connected to the circuit device; a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, the MTJ structure including:
a plurality of magnetic material patterns; anda plurality of insulation material patterns separating the plurality of magnetic material patterns from each other; and a plurality of upper electrodes on the MTJ structure. |
| 地址 |
Osan-si KR |
