| 主权项 |
1. A semiconductor apparatus comprising:
a first channel region of a semiconductor substrate between a source region of a first transistor and a drain region of the first transistor, said first channel region touching said source region of the first transistor and said drain region of the first transistor; a second channel region or a semiconductor substrate between a source region of a second transistor and a drain region of the second transistor, said second channel region touching said source region of the second transistor and said drain region of the second transistor; a first insulation film between a first gate electrode of a conductivity type and said first channel region, said first insulation film touching said first gate electrode and said first channel region, wherein the first gate electrode is made of a first transparent material; a second insulation film between a second gate electrode of a conductivity type and said second channel region, said second insulation film touching said second gate electrode and said second channel region, wherein the second gate electrode is made of a second transparent material different from the first transparent material, wherein a thickness of the first insulation film is less than a thickness of the second insulation film, an impurity concentration of the conductivity type in said second gate electrode being lower than an impurity concentration of the conductivity type in said first gate electrode. |
