EPITAXIALLY GROWN QUANTUM WELL FINFETS FOR ENHANCED PFET PERFORMANCE

摘要

A method of forming a quantum well having a conformal epitaxial well on a {100} crystallographic orientated fin. The method may include: forming fins in a {100} crystallographic oriented substrate; forming a conformal well on the fins using epitaxial growth; and forming a conformal barrier on the conformal well using epitaxial growth.

主权项

1. A method comprising:
forming a pad layer on a {100} crystallographic oriented substrate; forming a mandrel on the pad layer, wherein the pad layer is an oxide layer on a nitride layer; forming spacers on sidewalls of the mandrel, wherein the spacers are silicon nitride; forming a spacer pattern by removing the mandrel from in-between the spacers; transferring the spacer pattern into the oxide layer using the nitride layer as an etch stop; transferring the spacer pattern into the nitride layer and simultaneously removing the spacers from above the oxide layer; forming fins in the substrate by transferring the spacer pattern in the nitride layer into the substrate; forming a recessed oxide fill on the substrate and in-between the fins, a top surface of the recessed oxide fill is below a top surface of the fins; forming a conformal well on the fins using epitaxial growth; and forming a conformal barrier on the conformal well using epitaxial growth, wherein the conformal well is in-between the fins and the conformal barrier, the conformal well has a lower band-gap than the conformal barrier and the fins.