| 摘要 |
Systems and methods relate to a read operation on a magnetoresistive random access memory (MRAM) coupled with a tag array, the method comprising: receiving an index and a tag; based on the index, accessing n memory locations in the tag array and for each of the accessed n memory locations comparing data stored therein with the received tag; based on the index, activating a dummy word line in the MRAM; after the activation of the dummy word line, generating a hit signal associated with one of the n memory locations if the comparing indicates a match for said one of the n memory locations; in response to the activation of the dummy word line obtaining a settled reference voltage for reading MRAM bit cells of the MRAM designated by the index; among the MRAM cells designated by the index, reading the MRAM cells having a memory location corresponding to the one of the n-memory location in the tag array providing said hit signal, the reading using the settled reference voltage. |
