| 摘要 |
A method for preparing a nanoscale field effect transistor, belonging to the field of large-scale integration circuit manufacturing. The core of the method is the epitaxial growth and preparation of a nanoscale field effect transistor on an SOI substrate, and the material appearance of a channel of a nanoscale device may be accurately controlled via the epitaxial process, further optimising the performance of the device. Additionally, by implementing different channel doping types and doping concentrations, a threshold voltage may be flexibly adjusted so as to adapt to different parasitisms and fluctuations. The method is also compatible with a CMOS back gate process, has a simple procedure and low costs, and may be applied to future large-scale semiconductor device integration. |
