METHOD FOR MANUFACTURING WIRING STRUCTURE, COPPER DISPLACEMENT PLATING SOLUTION, AND WIRING STRUCTURE

摘要

Adhesion of an underlying diffusion barrier metal film and an electroless copper plating film with respect to an insulating film can be improved. A method for manufacturing a wiring structure includes a process of forming the underlying diffusion barrier metal film 5, including a base metal with respect to copper, on the insulating film 1; and a process of forming the electroless copper plating film 6 on the underlying diffusion barrier metal film 5 by performing an electroless copper displacement plating process with a copper displacement plating solution. The copper displacement plating solution is an acidic copper displacement plating solution of pH1 to pH4, in which copper ions are contained but a reducing agent for reducing the copper ions is not contained.

主权项

1. A method for manufacturing a wiring structure, comprising:
a process of forming an underlying diffusion barrier metal film, including a base metal with respect to copper, on an insulating film; and a process of forming an electroless copper plating film on the underlying diffusion barrier metal film by performing an electroless copper displacement plating process with a copper displacement plating solution, wherein the copper displacement plating solution is an acidic copper displacement plating solution of pH1 to pH4, in which copper ions are contained but a reducing agent for reducing the copper ions is not contained.