发明名称 SCHOTTKY ENHANCED BIAS CIRCUIT
摘要 Embodiments disclosed herein relate to a bias circuit that uses Schottky diodes. Typically, a bias circuit will include a number of transistors used to generate a bias voltage or a bias current for a power amplifier. Many wireless devices include power amplifiers to facilitate processing signals for transmission and/or received signals. By substituting the bias circuit design with a design that utilizes Schottky diodes, the required battery voltage of the bias circuit may be reduced enabling the use of lower voltage power supplies.
申请公布号 US2016094184(A1) 申请公布日期 2016.03.31
申请号 US201514868981 申请日期 2015.09.29
申请人 Skyworks Solutions, Inc. 发明人 Ripley David Steven
分类号 H03F1/02;H03F3/21;H03F3/193 主分类号 H03F1/02
代理机构 代理人
主权项 1. A bias circuit comprising: a first Schottky diode including a cathode and an anode, the cathode in communication with a power amplifier; a field effect transistor (FET) with a source in communication with the anode of the first Schottky diode; and a bipolar junction transistor in communication with the FET, the bipolar junction transistor including a collector in communication with a gate of the FET and a base in communication with the source of the FET.
地址 Woburn MA US