发明名称 |
SCHOTTKY ENHANCED BIAS CIRCUIT |
摘要 |
Embodiments disclosed herein relate to a bias circuit that uses Schottky diodes. Typically, a bias circuit will include a number of transistors used to generate a bias voltage or a bias current for a power amplifier. Many wireless devices include power amplifiers to facilitate processing signals for transmission and/or received signals. By substituting the bias circuit design with a design that utilizes Schottky diodes, the required battery voltage of the bias circuit may be reduced enabling the use of lower voltage power supplies. |
申请公布号 |
US2016094184(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201514868981 |
申请日期 |
2015.09.29 |
申请人 |
Skyworks Solutions, Inc. |
发明人 |
Ripley David Steven |
分类号 |
H03F1/02;H03F3/21;H03F3/193 |
主分类号 |
H03F1/02 |
代理机构 |
|
代理人 |
|
主权项 |
1. A bias circuit comprising:
a first Schottky diode including a cathode and an anode, the cathode in communication with a power amplifier; a field effect transistor (FET) with a source in communication with the anode of the first Schottky diode; and a bipolar junction transistor in communication with the FET, the bipolar junction transistor including a collector in communication with a gate of the FET and a base in communication with the source of the FET. |
地址 |
Woburn MA US |