| 发明名称 |
METHOD FOR FABRICATING AN IMPROVED GAN-BASED SEMICONDUCTOR LAYER |
| 摘要 |
The invention relates to a post-activation method of dopants in a doped and activated GaN-base semiconductor layer, including the following successive steps: providing said doped and activated substrate, eliminating a part of the semiconductor material layer. |
| 申请公布号 |
US2016093496(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514849237 |
申请日期 |
2015.09.09 |
| 申请人 |
COMMISSARIAT À L' ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES |
发明人 |
AGRAFFEIL Claire |
| 分类号 |
H01L21/265;H01L21/02;H01L21/324 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
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| 主权项 |
|
| 地址 |
Paris FR |
