| 摘要 |
This silicon carbide semiconductor device is provided with: a first conductivity-type silicon carbide layer 32; a second conductivity-type silicon carbide layer 36; a gate trench 20; a gate electrode 79 that is provided in the gate trench 20; and a protection trench 10 that is formed deeper than the gate trench 20. In the horizontal direction, a region including both the gate trench 20 and the protection trench 10 is set as a cell region, said protection trench surrounding, in the horizontal direction, only a part of the gate trench 20, and in the horizontal direction, a region wherein the protection trench 10 is included, and a gate pad 89 or a routing electrode connected to the gate pad 89 is disposed is set as a gate region. A second conductive member 81 is provided above the gate trench 20 in the cell region, and in the gate region, and the second conductive member 81 is disposed over the gate region from above the gate trench 20 in the cell region via above a cell region area where the protection trench 10 is not provided. |
