INJECTION MODULATOR

摘要

The invention relates inter alia to an injection modulator (10) for modulation of optical radiation (P), comprising an optical waveguide (20) and a diode structure (30), which has at least two p-doped semiconductor portions (110), at least two n-doped semiconductor portions (210) and at least one lightly doped or undoped intermediate portion (300) between the p-doped and n-doped semiconductor portions (110, 210). The p-doped semiconductor portions (110) - when viewed in the longitudinal direction (L) of the waveguide (20) - are offset with respect to the n-doped semiconductor portions (210) and the diode structure (30) is arranged in a resonance-free portion of the waveguide (20), in which - apart from waveguide attenuation - the radiation intensity of the radiation (P) guided in the waveguide (20) is constant. According to the invention, the p-doped semiconductor portions (110) lie on one side of the waveguide (20) - when viewed in the longitudinal direction (L) of the waveguide (20) and with respect to the waveguide center - , the n-doped semiconductor portions (210) lie on the other side of the waveguide (20) and the intermediate portion (300) lies in the region of the waveguide center, each semiconductor portion (110, 210) extends transversely with respect to the waveguide longitudinal direction (L) in the direction of the waveguide center of the waveguide (20) and no p-doped semiconductor portion (110) - when viewed in the longitudinal direction (L) of the waveguide (20) - overlaps any n-doped semiconductor portion (210).