| 摘要 |
PROBLEM TO BE SOLVED: To provide a residual layer removal method capable of improving removal efficiency of a residual layer formed on a side face of a convex structure.SOLUTION: In a residual layer removal method, an electric field lens 14 is arranged between a GCIB irradiation device 13 linearly irradiating a wafer W with an oxygen GCIB and the wafer W, the wafer having a plurality of pillar structures 35 which stand close together on the surface of the wafer W and have a residual layer 36 formed on a side face thereof. The electric field lens 14 diverges the oxygen GCIB comprising a plurality of oxygen gas clusters 26, and scans the surface of the wafer W with the diverged oxygen GCIB.SELECTED DRAWING: Figure 7 |
