发明名称 |
DUAL WORK FUNCTION BURIED GATE TYPE TRANSISTOR AND METHOD FOR FABRICATING THE SAME |
摘要 |
A transistor includes a substrate having an active region defined by an isolation layer; a first trench defined in the active region and a second trench defined in the isolation layer; a fin region formed under the first trench; and a buried gate electrode covering sidewalls of the fin region and filling the first and second trenches. The buried gate electrode includes a first work function layer formed on the sidewalls of the fin region; a second work function layer formed on sidewalls of the first trench and the second trench; a third work function layer positioned over the fin region and contacting the second work function layer; and a low resistance layer contacting the third work function layer and partially filling the first and second trenches. |
申请公布号 |
US2016093717(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201514965325 |
申请日期 |
2015.12.10 |
申请人 |
SK hynix Inc. |
发明人 |
OH Tae-Kyung |
分类号 |
H01L29/66;H01L21/311;H01L21/28;H01L21/306;H01L29/423;H01L29/06 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Gyeonggi-do KR |