SEMICONDUCTOR DEVICES WITH REPLACEMENT GATE STRUCTURES

摘要

A transistor device includes a semiconductor substrate and a gate structure positioned above a surface of the semiconductor substrate. The gate structure includes a high-k gate insulation layer positioned above the surface of the semiconductor substrate and at least one work-function adjusting layer of material positioned above the high-k gate insulation layer, wherein an upper surface of the at least one work-function adjusting layer of material has a stepped profile when viewed in cross-section taken in a gate-width direction of the transistor device. The gate structure further includes a layer of conductive material positioned on the stepped upper surface of the at least one work-function adjusting layer of material.

主权项

1. A transistor device, comprising:
a semiconductor substrate; and a gate structure positioned above a surface of said semiconductor substrate, said gate structure comprising:
a high-k gate insulation layer positioned above said surface of said semiconductor substrate;at least one work-function adjusting layer of material positioned above said high-k gate insulation layer, wherein an upper surface of said at least one work-function adjusting layer of material has a stepped profile when viewed in cross-section taken in a gate-width direction of said transistor device; anda layer of conductive material positioned on said stepped upper surface of said at least one work-function adjusting layer of material.