FINFET SEMICONDUCTOR DEVICES WITH REPLACEMENT GATE STRUCTURES

摘要

A device includes first and second fins defined in a semiconductor substrate and a raised isolation post structure positioned between the first and second fins, wherein an upper surface of the raised isolation post structure is at a level that is approximately equal to or greater than a level corresponding to an upper surface of each of the first and second fins. A first space is defined by a sidewall of the first fin and a first sidewall of the raised isolation post structure, a second space is defined by a sidewall of the second fin and a second sidewall of the raised isolation post structure, and a gate structure is positioned around a portion of each of the first and second fins and around a portion of the raised isolation post structure, wherein at least portions of the gate structure are positioned in the first and second spaces.

主权项

1. A device, comprising:
first and second fins defined in a semiconductor substrate; a raised isolation post structure positioned between said first and second fins, wherein an upper surface of said raised isolation post structure is at a level that is approximately equal to or greater than a level corresponding to an upper surface of each of said first and second fins; a first space defined by a sidewall of said first fin and a first sidewall of said raised isolation post structure; a second space defined by a sidewall of said second fin and a second sidewall of said raised isolation post structure; and a gate structure positioned around a portion of each of said first and second fins and around a portion of said raised isolation post structure, wherein at least portions of said gate structure are positioned in said first and second spaces.