SEMICONDUCTOR DEVICES INCLUDING A SUPPORT FOR AN ELECTRODE AND METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING A SUPPORT FOR AN ELECTRODE

摘要

Semiconductor devices are provided. Each of the semiconductor devices may include a plurality of electrodes. Moreover, each of the semiconductor devices may include a supporting pattern connected to sidewalls of the plurality of electrodes. Related methods of forming semiconductor devices are also provided. For example, the methods may include forming the supporting pattern before forming the plurality of electrodes.

主权项

1. A semiconductor device comprising:
a substrate; a plurality of capacitors comprising:
a plurality of respective lower electrodes on the substrate;a dielectric film on surfaces of the plurality of lower electrodes; andan upper electrode on the dielectric film; a first supporting pattern connected to respective lower sidewalls of the plurality of lower electrodes and comprising a first opening; and a second supporting pattern connected to respective upper sidewalls of the plurality of lower electrodes and comprising a second opening, wherein a first distance between the first and second supporting patterns is longer than a second distance between the first supporting pattern and respective bottom portions of the plurality of lower electrodes adjacent the substrate.